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| Final data Silicon Carbide Schottky Diode * Worlds first 600V Schottky diode * Revolutionary semiconductor material - Silicon Carbide * Switching behavior benchmark * No reverse recovery * No temperature influence on the switching behavior * Ideal diode for Power Factor Correction up to 800W 1) * No forward recovery P-TO220-2-2. SDP04S60, SDD04S60 SDT04S60 Product Summary VRRM Qc IF P-TO252-3-1. 600 13 4 P-TO220-3-1. V nC A Type SDP04S60 SDD04S60 SDT04S60 Package P-TO220-3-1. P-TO252-3-1. P-TO220-2-2. Ordering Code Q67040-S4369 Q67040-S4368 Q67040-S4445 Marking D04S60 D04S60 D04S60 Pin 1 n.c. PIN 2 C PIN 3 A n.c. A C C Value 4 5.6 12.5 18 40 0.78 600 600 36.5 A Unit A Maximum Ratings, at Tj = 25 C, unless otherwise specified Symbol Parameter Continuous forward current, TC=100C RMS forward current, f=50Hz TC=25C, tp=10ms IF IFRMS Surge non repetitive forward current, sine halfwave IFSM Repetitive peak forward current Tj=150C, TC=100C, D=0.1 IFRM IFMAX i2dt VRRM VRSM Ptot Tj , Tstg Non repetitive peak forward current tp=10s, TC=25C i 2t value, TC=25C, tp=10ms Repetitive peak reverse voltage Surge peak reverse voltage Power dissipation, TC=25C Operating and storage temperature As V W C -55... +175 Page 1 2004-02-11 Final data SDP04S60, SDD04S60 SDT04S60 Values min. typ. 35 max. 4.1 62 62 75 50 K/W Unit Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: P-TO263-3-2: @ min. footprint P-TO263-3-2: @ 6 cm2 cooling area 2) P-TO252-3-1: @ min. footprint P-TO252-3-1: @ 6 cm2 cooling area 2) Symbol RthJC RthJA RthJA - Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Diode forward voltage IF=4A, Tj=25C IF=4A, Tj=150C Symbol min. VF IR - Values typ. max. Unit V 1.7 2 15 40 1.9 2.4 A 200 1000 Reverse current V R=600V, T j=25C V R=600V, T j=150C 1CCM, V = 85VAC, T = 150C, T =100C, = 93%, I = 30% IN j C IN 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2004-02-11 Final data SDP04S60, SDD04S60 SDT04S60 Unit max. nC ns pF 150 10 7 - Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values min. AC Characteristics Total capacitive charge V R=400V, IF=4A, diF/dt=200A/s, T j=150C typ. 13 n.a. Qc trr C - Switching time V R=400V, IF=4A, diF/dt=200A/s, T j=150C Total capacitance V R=0V, T C=25C, f=1MHz V R=300V, T C=25C, f=1MHz V R=600V, T C=25C, f=1MHz Page 3 2004-02-11 Final data SDP04S60, SDD04S60 SDT04S60 1 Power dissipation Ptot = f (TC) 40 2 Diode forward current IF = f (TC) parameter: Tj175 C 4.5 W A 30 3.5 3 Ptot IF 2.5 2 1.5 1 0.5 0 0 25 20 15 10 5 0 0 20 40 60 80 100 120 140 C 180 TC 20 40 60 80 100 120 140 C 180 TC 3 Typ. forward characteristic IF = f (VF) parameter: Tj , tp = 350 s 8 4 Typ. forward power dissipation vs. average forward current PF(AV)=f(IF) TC=100C, d = tp/T 18 A -40C 25C 100C 125C 150C W 6 14 PF(AV) 12 10 IF 5 4 8 3 6 2 4 2 0 0 1 d=0.1 d=0.2 d=0.5 d=1 0 0 0.5 1 1.5 2 2.5 V VF 3.5 1 2 3 4 5 A 7 IF(AV) Page 4 2004-02-11 Final data SDP04S60, SDD04S60 SDT04S60 5 Typ. reverse current vs. reverse voltage I R=f(VR) 10 2 6 Transient thermal impedance ZthJC = f (t p) parameter : D = t p/T 10 1 SDP04S60 A 10 1 K/W 10 0 10 0 ZthJC 10 -1 IR 10 -1 25C 100C 125C 150C D = 0.50 10 -2 0.20 0.10 single pulse 0.05 0.02 0.01 10 -2 10 -3 10 -3 100 200 300 400 V VR 600 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 7 Typ. capacitance vs. reverse voltage C= f(V R) parameter: TC = 25 C, f = 1 MHz 125 8 Typ. C stored energy EC=f(V R) 2 J pF 1.6 1.4 75 EC 1 2 3 10 V VR 1.2 1 C 50 0.8 0.6 25 0.4 0.2 00 10 10 10 0 0 100 200 300 400 V VR 600 Page 5 2004-02-11 Final data SDP04S60, SDD04S60 SDT04S60 9 Typ. capacitive charge vs. current slope Q c=f(diF /dt) parameter: Tj = 150 C 14 nC IF*2 IF IF *0.5 10 Qc 8 6 4 2 0 100 200 300 400 500 600 700 800 A/s 1000 diF /dt Page 6 2004-02-11 Final data SDP04S60, SDD04S60 SDT04S60 P-TO220-3-1 P-TO220-3-1 dimensions symbol min A B C D E F G H K L M N P T 9.70 14.88 0.65 3.55 2.60 6.00 13.00 4.35 0.38 0.95 [mm] max 10.30 15.95 0.86 3.89 3.00 6.80 14.00 4.75 0.65 1.32 min 0.3819 0.5858 0.0256 0.1398 0.1024 0.2362 0.5118 0.1713 0.0150 0.0374 [inch] max 0.4055 0.6280 0.0339 0.1531 0.1181 0.2677 0.5512 0.1870 0.0256 0.0520 2.54 typ. 4.30 4.50 1.17 2.30 1.40 2.72 0.1 typ. 0.1693 0.1772 0.0461 0.0906 0.0551 0.1071 P-TO252 (D-Pak) dimensions symbol min A B C D E F G H K L M N P R S T U 2.19 0.76 0.90 5.97 9.40 0.46 0.87 0.51 5.00 4.17 0.26 6.40 5.25 (0.65) 0.63 2.28 2.39 0.98 1.21 6.23 10.40 0.58 1.15 1.02 [mm] max 6.73 5.50 (1.15) 0.89 min 0.2520 0.2067 0.0248 inch] max 0.2650 0.2165 0.0350 (0.0256) (0.0453) 0.2520 0.0862 0.0941 0.0299 0.0354 0.2350 0.3701 0.0181 0.0343 0.0201 0.1969 0.1642 0.0102 0.0386 0.0476 0.2453 0.4094 0.0228 0.0453 0.0402 - Page 7 2004-02-11 Final data SDP04S60, SDD04S60 SDT04S60 TO-220-2-2 A P D U H B V E N dimensions symbol min A B C D E 9.70 15.30 0.65 3.55 2.60 9.00 13.00 17.20 4.40 0.40 [mm] max 10.10 15.90 0.85 3.85 3.00 9.40 14.00 17.80 4.80 0.60 min 0.3819 0.6024 0.0256 0.1398 0.1024 0.3543 0.5118 0.6772 0.1732 0.0157 [inch] max 0.3976 0.6260 0.0335 0.1516 0.1181 0.3701 0.5512 0.7008 0.1890 0.0236 F W J G F G H J K L M N P T U V W 1.05 typ. 2.54 typ. 4.4 typ. 1.10 1.40 2.4 typ. 6.6 typ. 13.0 typ. 7.5 typ. 0.00 0.40 0.41 typ. 0.1 typ. 0.173 typ. 0.0433 0.0551 0.095 typ. 0.26 typ. 0.51 typ. 0.295 typ. 0.0000 0.0157 X L C M T K X Page 8 2004-02-11 Final data Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. SDP04S60, SDD04S60 SDT04S60 Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 9 2004-02-11 |
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